Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods

P. Durmus *Et Al.* , "Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods," *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , vol.12, no.7, pp.1472-1478, 2010

Durmus, P. *Et Al.* 2010. Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods. *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , *vol.12, no.7* , 1472-1478.

Durmus, P., Altindal, S., & TATAROĞLU, A., (2010). Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods. *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , vol.12, no.7, 1472-1478.

Durmus, P., S. Altindal, And ADEM TATAROĞLU. "Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods," *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , vol.12, no.7, 1472-1478, 2010

Durmus, P. *Et Al.* "Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods." *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , vol.12, no.7, pp.1472-1478, 2010

Durmus, P. Altindal, S. And TATAROĞLU, A. (2010) . "Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods." *JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS* , vol.12, no.7, pp.1472-1478.

@article{article, author={P. Durmus *Et Al.* }, title={Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2010, pages={1472-1478} }