ALTINDAL, Ş. Et Al. 2008. On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes. MICROELECTRONIC ENGINEERING , vol.85, no.7 , 1495-1501.

ALTINDAL, Ş., Kanbur, H., Yuecedag, I., & TATAROĞLU, A., (2008). On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes. MICROELECTRONIC ENGINEERING , vol.85, no.7, 1495-1501.

ALTINDAL, ŞEMSETTİN Et Al. "On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes," MICROELECTRONIC ENGINEERING , vol.85, no.7, 1495-1501, 2008

ALTINDAL, ŞEMSETTİN Et Al. "On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes." MICROELECTRONIC ENGINEERING , vol.85, no.7, pp.1495-1501, 2008

ALTINDAL, Ş. Et Al. (2008) . "On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes." MICROELECTRONIC ENGINEERING , vol.85, no.7, pp.1495-1501.

@article{article, author={ŞEMSETTİN ALTINDAL Et Al. }, title={On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/P-Si (MIS) Schottky diodes}, journal={MICROELECTRONIC ENGINEERING}, year=2008, pages={1495-1501} }