KANBUR ÇAVUŞ, H. Et Al. 2016. I V characteristics of Al p Si Schottky diode with Al2O3 thin film. NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION , (Antalya, Turkey), 115.

KANBUR ÇAVUŞ, H., YILDIZ, D. E., & Yiğiterol, F., (2016). I V characteristics of Al p Si Schottky diode with Al2O3 thin film . NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION (pp.115). Antalya, Turkey

KANBUR ÇAVUŞ, HATİCE, DİLBER ESRA YILDIZ, And Fatih Yiğiterol. "I V characteristics of Al p Si Schottky diode with Al2O3 thin film," NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION, Antalya, Turkey, 2016

KANBUR ÇAVUŞ, HATİCE K. Et Al. "I V characteristics of Al p Si Schottky diode with Al2O3 thin film." NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION , Antalya, Turkey, pp.115, 2016

KANBUR ÇAVUŞ, H. YILDIZ, D. E. And Yiğiterol, F. (2016) . "I V characteristics of Al p Si Schottky diode with Al2O3 thin film." NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION , Antalya, Turkey, p.115.

@conferencepaper{conferencepaper, author={HATİCE KANBUR ÇAVUŞ Et Al. }, title={I V characteristics of Al p Si Schottky diode with Al2O3 thin film}, congress name={NANOSCIENCE&NANOTECHNOLOGY FOR NEXT GENERATION}, city={Antalya}, country={Turkey}, year={2016}, pages={115} }