Altindal, S. Et Al. 2007. The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2). PHYSICA B-CONDENSED MATTER , vol.399, no.2 , 146-154.

Altindal, S., Kanbur, H., TATAROĞLU, A., & Buelbuel, M. M., (2007). The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2). PHYSICA B-CONDENSED MATTER , vol.399, no.2, 146-154.

Altindal, S. Et Al. "The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)," PHYSICA B-CONDENSED MATTER , vol.399, no.2, 146-154, 2007

Altindal, S. Et Al. "The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)." PHYSICA B-CONDENSED MATTER , vol.399, no.2, pp.146-154, 2007

Altindal, S. Et Al. (2007) . "The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)." PHYSICA B-CONDENSED MATTER , vol.399, no.2, pp.146-154.

@article{article, author={S. Altindal Et Al. }, title={The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)}, journal={PHYSICA B-CONDENSED MATTER}, year=2007, pages={146-154} }