Characterization of an Au/n-Si photovoltaic structure with an organic thin film

Ozaydin C., Akkilic K., Ilhan S., Ruzgar S., Gullu O., Temel H.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, vol.16, no.4, pp.1125-1130, 2013 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 16 Issue: 4
  • Publication Date: 2013
  • Doi Number: 10.1016/j.mssp.2013.03.002
  • Journal Name: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1125-1130
  • Keywords: Devices, Schottky barrier, Organics, Surfaces and interfaces, CURRENT-VOLTAGE CHARACTERISTICS, BARRIER HEIGHT, SCHOTTKY CONTACTS, ELECTRICAL CHARACTERIZATION, DIODES, TEMPERATURE, TRANSPORT, DEPENDENCE, LAYER, GAP
  • Yozgat Bozok University Affiliated: No

Abstract

We demonstrate that a copper(II) organic complex can control the electrical characteristics of conventional Au/n-Si metal semiconductor (MS) contacts. We investigated the electronic and photovoltaic properties of a Cu(II) complex/n-Si heterojunction diode. The ideality factor n and barrier height Phi(b) of the diode were 2.22 and 0.736 eV, respectively. An ideality factor greater than unity indicates that the diode exhibits non-ideal current voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. The series resistance and barrier height determined using Norde's method were 6.7 k Omega and 0.77 eV, respectively. The device showed photovoltaic behavior, with a maximum open-circuit voltage of 0.24 V and a short circuit current of 1.7 mu A under light of 8 mW/cm(2). (C) 2013 Elsevier Ltd. All rights reserved.