Tin Oxide (SnO) compounds, both SnO and SnO2 are wide band gap semiconductors, which are highly optically transparent in the visible range (400-700 nm). Graphene is also highly optically transparent and durable material. Doped SnO thin films can be defined as transparent conducive oxide (TCO) thin films, similarly to indium fin oxide (ITO), aluminum doped zinc oxide (AZO) and gallium doped zinc oxide (GZO) thin films. In this study, the graphene doped thin films are deposited onto glass and Silicon (Si) wafer substrates by using thermionic vacuum arc (TVA) technique. The structural, morphological and optical properties of graphene doped SnO thin films were investigated by various methods such as X-ray diffraction spectroscopy, atomic force microscopy, field emission scanning electron microscopy, Fourier Transform infrared spectroscopy, Raman spectroscopy, Interferometer, Fluorescence spectrometer and UV-Vis spectrophotometer. According to results, the deposited thin films have high transparency (90%), polycrystalline structure, low roughness and high homogeneity. The thicknesses of the thin films were measured as 10 nm and 8 nm deposited onto glass and Si substrate, respectively. Graphene flakes combining with other graphene flakes and SnO compounds formed diamond poly type structures along with graphene oxide (GO) structures. The band gap values of the thin films were measured as 3.11 eV and 3.33 eV deposited onto glass and Si substrate, respectively. These results show that by doping graphene the band gap value shifted towards to violet region from ultraviolet region.