Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes
APPLIED SURFACE SCIENCE, vol.252, no.4, pp.1153-1158, 2005 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 252 Issue: 4
- Publication Date: 2005
- Doi Number: 10.1016/j.apsusc.2005.02.044
- Journal Name: APPLIED SURFACE SCIENCE
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.1153-1158
- Yozgat Bozok University Affiliated: No
Abstract
Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermonic-field emission resulted in the following parameters: characteristic energy E-00 = 9.8 meV, Schottky barrier height at zero bias phi(bO) = 0.802 eV, bias coefficient of barrier height beta = 0 and effective Richardson constant A* = 37.32 A cm(-2) K-2. (c) 2005 Elsevier B.V. All rights reserved.