Zr-doped GaN thin films grown onto glass and PET substrates by thermionic vacuum arc


MATERIALS RESEARCH EXPRESS, vol.6, no.4, 2019 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 6 Issue: 4
  • Publication Date: 2019
  • Doi Number: 10.1088/2053-1591/aaf955
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: thermionic vacuum arc, GaN, Zr doping, electrical properties, surface properties, INDIUM GALLIUM NITRIDE, MAGNETORESISTANCE, SEMICONDUCTOR, TRANSPARENT
  • Yozgat Bozok University Affiliated: Yes


In this research, Zr-doped GaN thin films having same thickness (60 nm) were grown onto different substrates i.e. glass and PET (polyethylene terepthalate) by means of thermionic vacuum arc (TVA) technique at room temperature (RT). The structural characteristics of the obtained Zr-doped thin films were investigated by using an x-ray diffractometer (XRD). The obtained results indicate that the films contain crystal phase with (113) oriented GaN. The optical properties such as reflectance and refractive index were determined using an optical thin film analyzer. From the optical analysis, the refractive index at the wavelength of 632.8 nm was found as 2.55 for the film on glass and 2.60 for the film on PET. The surface properties of the produced thin films were characterized by atomic force microscope (AFM). The observation is that the surface morphologies of the films are homogeneous and granular. Hall measurement system was used for the electrical measurements in RT. The conductivity type of Zr-doped thin films was determined as n-type.