In this paper, Zn/ZnSe thin films were deposited on glass substrates by RF magnetron sputtering system. XRD analyses were done. Zn and ZnSe phases were obtained. Miller indices of obtained Zn phases were detected in (320), (620) and (112) crystal formation. For the ZnSe phases, only one peak of (110)/(220) was observed. The surface morphology of the samples was investigated by an atomic force microscopy tools. It found that average roughness of the films was increased by raised RF power. The thin films around 80 % of high transmittance were measured. The band gap values were calculated as to be similar to 2.80 eV by the Cauchy model. The calculated refractive indices values were approximately 2.25 by a relation between the refractive index and the band gap.