JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.8, no.2, pp.165-169, 2013 (SCI-Expanded)
In this study, we have calculated the binding energies, optical rectification (OR) and oscillator strength of the ground and excited states in a spherical CdS/SiO2 quantum dot of a parabolic confinement with an on-center shallow hydrogenic impurities in presence of an applied external electric field. In the calculations, a variational procedure was employed within the effective-mass approximation. We found that the OR and oscillator strength of 0s-1p and 1p-2d transitions depend on the applied electric field. The results obtained show that the existence of the electric field has great influence on the binding energy, OR and oscillator strength. Also, we have found that the OR and oscillator strength are controlled by the strength of the confinement.