Some Physical Properties of the SiGe Thin Film Coatings by Thermionic Vacuum Arc (TVA)


ÖZEN S. , PAT S., Senay V., KORKMAZ Ş., Gecici B.

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, vol.10, no.1, pp.56-60, 2015 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 10 Issue: 1
  • Publication Date: 2015
  • Doi Number: 10.1166/jno.2015.1693
  • Title of Journal : JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
  • Page Numbers: pp.56-60

Abstract

SiGe thin films were deposited on glass and PET substrate by the thermionic vacuum arc (TVA) method for the first time. TVA is an anodic plasma generator which works in high vacuum conditions. Highly pure and quality films can be deposited on different substrates by means of this method. In order to characterize the produced films, X-ray diffraction, field emission scanning electron microscope (FESEM), atomic force microscope (AFM), energy dispersive X-ray spectrometer (EDX), optical tensiometer, UV-Vis spectrophotometer and spectroscopic ellipsometer (SE) devices were used. The obtained XRD peaks at 47 degrees and 75 degrees are described to the reflections of (220) and (331) planes of Ge or Si. According to the measurement results, substrates materials are affect the surface and optical properties of the deposited SiGe layers. SiGe coated samples with low optical band gaps exhibit low transparency and high absorption. The structures are homogenous and less rough.