The determination of interface states and series resistance profile of Al/polymer/PEDOT-PSS/ITO heterojunction diode by I-V and C-V methods


Sahingoez R., Kanbur H. , Voigt M., Soykan C.

SYNTHETIC METALS, vol.158, pp.727-731, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 158
  • Publication Date: 2008
  • Doi Number: 10.1016/j.synthmet.2008.04.023
  • Title of Journal : SYNTHETIC METALS
  • Page Numbers: pp.727-731

Abstract

The forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Al/polymer/PEDOT-PSS/ITO heterojunction diodes have been investigated in the frequency range of 10 kHz to 5 MHz at room temperature. The obtained C-V and G/w-V characteristics of these diodes at various gate biases show fairly large frequency dispersion especially at low frequencies and forward bias due to surface states N-ss in equilibrium with the polymer semiconductor and series resistance R-s. These observations indicate that at low frequencies, the charges at interface states can easily follow an ac signal and yield an excess capacitance and conductance. In addition, the forward and reverse bias current-voltage (I-V) characteristics of Al/polymer/PEDOT-PSS/ITO heterojunction diode were measured at room temperature. The main diode parameters such as barrier height phi(B0), ideality factor n and average series resistance R-s obtained from the forward bias In I-V characteristics were found as 0.53 eV, 4.79 and 195 Omega, respectively. Experimental results show that both N-ss and R-s values should be taken into account in determining frequency and voltage-dependent I-V, C-V and G/w-V characteristics. (c) 2008 Elsevier BY. All rights reserved.