Morphological and optical comparison of the Si doped GaN thin film deposited onto the transparent substrates


ÖZEN S. , Senay V., PAT S., KORKMAZ Ş.

MATERIALS RESEARCH EXPRESS, vol.3, no.4, 2016 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 4
  • Publication Date: 2016
  • Doi Number: 10.1088/2053-1591/3/4/045012
  • Title of Journal : MATERIALS RESEARCH EXPRESS

Abstract

The aim of this paper is to expand the body of knowledge about the silicon doped gallium nitride thin films deposited on different substrates. The physical properties of the Si doped GaN thin films deposited on the glass and polyethylene terephthalate substrates by thermionic vacuum arc which is plasma production technique were investigated. Thermionic vacuum arc method is a method of producing pure material plasma. The Si doped GaN thin films were analyzed using the following methods and the devices: atomic force microscopy, x-ray diffraction device, spectroscopic ellipsometer and energy dispersive x-ray spectroscopy detector. The produced Si doped GaN thin films are in the (113) orientation. The thicknesses and refractive index were determined by using Cauchy dispersion model. Surface morphologies of produced thin films are homogenous and low roughness. Our analysis showed that the thermionic vacuum arc method present important advantages for optical and industrial applications.