An investigation on the effect of impurity position on the binding energy of quantum box under electric field with pressure and temperature

Yilmaz S., Kirak M.

INTERNATIONAL JOURNAL OF MODERN PHYSICS B, cilt.32, sa.13, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 13
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1142/s0217979218501540
  • Dergi Adı: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: Quantum box, impurity position, pressure, temperature, electric field, HYDROGENIC DONOR IMPURITY, CHEMICAL-VAPOR-DEPOSITION, HYDROSTATIC-PRESSURE, OPTICAL-ABSORPTION, GALLIUM-ARSENIDE, REFRACTIVE-INDEX, EXCITON-STATES, WELL, GAAS, DOTS
  • Yozgat Bozok Üniversitesi Adresli: Evet

Özet

In the present study, we have studied theoretically the influences of donor impurity position on the binding energy of a GaAs cubic quantum box structure. The binding energy is calculated as functions of the position of impurity, electric field, temperature and hydrostatic pressure. The variational method is employed to obtain the energy eigenvalues of the structure in the framework of the effective mass approximation. It has been found that the impurity positions with electric field, pressure and temperature have an important effect on the binding energy of structure considered. The results can be used to manufacture semiconductor device application by manipulating the binding energy with the impurity positions, electric field, pressure and temperature.