The effect of series resistance on capacitance-voltage characteristics of Schottky barrier diodes


Sahin B., Cetin H. , Ayyildiz E.

SOLID STATE COMMUNICATIONS, vol.135, no.8, pp.490-495, 2005 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 135 Issue: 8
  • Publication Date: 2005
  • Doi Number: 10.1016/j.ssc.2005.05.050
  • Title of Journal : SOLID STATE COMMUNICATIONS
  • Page Numbers: pp.490-495

Abstract

The capacitance-voltage (C-VI) and current-voltage (I-V) characteristics of the Ti/p-Si Schottky barrier diodes (SBDs) have been investigated taking into account the effect of the interface states and series resistance of the device. The forward C-V measurements have been carried out in the range frequency of 0.3-2 MHz (at six different frequencies). It is seen that the forward C-V plots exhibit anomalous peaks in the presence of a series resistance. It has been experimentally determined that the peak positions in the C-V plot shift towards lower voltages and the peak value of the capacitance decreases with increasing frequency. In addition to, the effect of series resistance on the capacitance is found appreciable at higher frequencies due to the capacitance decreases with increasing frequency. (C) 2005 Elsevier Ltd. All rights reserved.