Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(100) Schottky barrier diodes


Boyarbay B., Cetin H. , Kaya M., Ayylldiz E.

MICROELECTRONIC ENGINEERING, vol.85, no.4, pp.721-726, 2008 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 85 Issue: 4
  • Publication Date: 2008
  • Doi Number: 10.1016/j.mee.2008.01.005
  • Title of Journal : MICROELECTRONIC ENGINEERING
  • Page Numbers: pp.721-726
  • Keywords: Schottky barriers, metal-semiconductor interfaces, thermionic emission, silicon, barrier inhomogeneities, CURRENT-VOLTAGE CHARACTERISTICS, ELECTRON-EMISSION MICROSCOPY, INDUCED GAP STATES, TEMPERATURE-DEPENDENCE, SERIES RESISTANCE, N-TYPE, INHOMOGENEITY, CONTACTS, PARAMETERS, TRANSPORT

Abstract

Schottky barrier diodes (SBDs) were prepared by evaporation on H-terminated p-Si(1 0 0) surfaces. The Si(1 0 0)-H surfaces were obtained by wet chemical etching in diluted hydrofluoric acid. The current-voltage (I-V) characteristics of real SBDs are described by using two fitting parameters that are the effective barrier height (EBH) Phi(eff)(b) and ideality factor n. They were determined from I-V characteristics of SBDs (30 diodes) fabricated under experimentally identical conditions. The obtained values of EBHs varied from 0.729 to 0.749 eV, and the values of ideality factors varied from 1.083 to 1.119. The results showed that both parameters of SBDs differ from one diode to another even if they are identically prepared. The EBH distributions were fitted by two Gaussian distribution functions, and their mean values were found to be 0.739 +/- 0.003 eV and 0.733 +/- 0.001 eV, respectively. The homogeneous barrier height of SBDs was found to be 0.770 eV from the linear relationship between EBHs (Phi(eff)(b)) and ideality factors (n). (C) 2008 Elsevier B.V. All rights reserved.