The alternative P-type GaN film with polycrystalline structure by Zn transition metal doping

ÖZEN S., PAT S., KORKMAZ Ş.

Journal of Materials Science: Materials in Electronics, vol.36, no.16, 2025 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 36 Issue: 16
  • Publication Date: 2025
  • Doi Number: 10.1007/s10854-025-15038-w
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Yozgat Bozok University Affiliated: Yes

Abstract

In this study, a high-conductivity p-type GaN film with zincblende-wurtzite polycrystalline structure was produced by Zn transition metal doping using the thermionic vacuum arc (TVA) method. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), energy dispersive spectrometer (EDX), UV–VIS spectrophotometer, Filmetrics F20 thin film analyzer and Hall effect techniques were used to investigate the elemental, optical, electronic, nanostructural, morphological and electrical properties of the sample. XRD pattern of the film shows the zincblende-wurzite polycrystalline nature. GaN film showed low resistivity and high mobility p-type electrical properties with Zn doping. Also, the optical band gap value shifted towards red with Zn doping. The main grain sizes of the Zn-doped GaN film are approximately 200–250 nm in a uniformly distributed spherical structure. The physical properties of the sample we obtained indicate that it could be an alternative for producing high-quality p-type GaN.