A theoretical investigation of the binding energy, the radial probability distribution and optical properties (absorption coefficient (AC) and refractive index change (RIC)) of InGaN/GaN multilayer quantum dot (QD) is presented. The calculations are performed within the effective-mass approximation. A shooting method is presented to obtain numerical values for the eigenvalues and eigenfunctions of the structure. The energy eigenvalue, density of probability and optical absorption are compared for cases without and with impurity. It is also found that the ACs and RICs exhibit blue or redshift with different structure of potential profile. The results indicate that the optical properties can be sensitively adjusted by geometry of structure and the presence of impurity.