In this work, effects of TiO2 contribution together with two different doping as graphene oxide (GO) and rubidium fluoride (RbF) are investigated at the interface of Au/n-Si metal-semiconductor (MS) diode. Diode characteristics are mainly evaluated from current-voltage measurements and values of barrier height and ideality factor are compared to the diodes with and without doping in interface layer. Although existence of interface layer increases these values, there is a decrease with adapting GO and RbF to the TiO2 structure. In addition, series and shunt resistance values are calculated with interface layer, and resistance effect is also discussed by Norde's and Cheung's functions. Forward biased carrier transport mechanism is evaluated under the presence of interface states by thermionic emission model and density of interface trap states is also discussed. At the reverse biased region, field effected thermionic emission model is found to be dominant flow mechanism, and leakage current behavior is explained by Schottky effect. Solar simulator with different illumination intensities is used to investigate photo-generated carrier contribution and photo-response of the diodes.