Al doped ZnO thin film deposition by thermionic vacuum arc


ÖZGÜR M., PAT S., Mohammadigharehbagh R., Musaoglu C., DEMİRKOL U., Elmas S., ...More

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol.30, no.1, pp.624-630, 2019 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 30 Issue: 1
  • Publication Date: 2019
  • Doi Number: 10.1007/s10854-018-0329-x
  • Title of Journal : JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Page Numbers: pp.624-630

Abstract

ZnO thin films are widely used in many application areas due to its various properties. The properties of the ZnO thin film strongly depend on the manufacturing method, doping elements and ratio and substrate material. In this paper, ZnO material was doped by Al element. Thermionic vacuum arc is a fast deposition technology for Al doped ZnO thin film manufacturing. TVA is physical vapor deposition technology, using anodic vacuum arc. It works under the high vacuum condition. The thin films were deposited onto amorphous glass, semi-crystal PET and single crystal Si substrate. Structural, morphological and optical properties of the Al doped ZnO thin films are presented. Thin films are in polycrystalline form and have high crystalline quality. According to the XRD analysis, metal oxide phases (ZnO and Al2O3) and bi-metal oxide (ZnAl2O4) phases were detected. It was found that crystallite sizes strongly depend on the substrate. The crystallite size of the thin film deposited on the Si substrate is approximately 100nm. For the other sample, the value is very small; it is just about 20nm. Considering the optical results of the samples, all films are transparent in visible region. Band gap and electronic structures of the Al doped ZnO thin films were investigated by optical method, photoluminescence and Raman spectra. The band gaps of the thin films were shifted towards to the high-energy region. Any impurity in deposited thin films cannot detect by the analyses devices.