Oscillator strengths for the intersubband transitions in a CdS-SiO2 quantum dot with hydrogenic impurity
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.36, sa.1, ss.40-44, 2007 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 36 Sayı: 1
- Basım Tarihi: 2007
- Doi Numarası: 10.1016/j.physe.2006.07.040
- Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.40-44
- Anahtar Kelimeler: oscillator strengths, quantum dots, impurity, intersubband transitions, OPTICAL-ABSORPTION, WELL, STATES, PHOTOIONIZATION, FIELD
- Yozgat Bozok Üniversitesi Adresli: Evet
Özet
In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated. (c) 2006 Elsevier B.V. All rights reserved.