Schottky contacts to InP
Physica Status Solidi C: Conferences, cilt.2, sa.4, ss.1423-1427, 2005 (Scopus)
- Yayın Türü: Makale / Özet
- Cilt numarası: 2 Sayı: 4
- Basım Tarihi: 2005
- Doi Numarası: 10.1002/pssc.200460479
- Dergi Adı: Physica Status Solidi C: Conferences
- Derginin Tarandığı İndeksler: Scopus
- Sayfa Sayıları: ss.1423-1427
- Yozgat Bozok Üniversitesi Adresli: Hayır
Özet
We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H 2O solutions before metallization, investigatinging the effect of an air exposure and investigating the effect of the metal work function using Al and Sn metallizations as well. A best Schottky barrier height of 0.83 eV could be achieved using an HCl:H2O surface treatment. © 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.