Perovskite/p-Si photodiode with ultra-thin metal cathode


Cifci O. S. , Kocyigit A., Sun P.

SUPERLATTICES AND MICROSTRUCTURES, vol.120, pp.492-500, 2018 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 120
  • Publication Date: 2018
  • Doi Number: 10.1016/j.spmi.2018.06.009
  • Title of Journal : SUPERLATTICES AND MICROSTRUCTURES
  • Page Numbers: pp.492-500
  • Keywords: Ultra-thin metal, I-V characteristics, Schottky device, Photodiode, Perovskite, STATE ENERGY-DISTRIBUTIONS, HALIDE PEROVSKITE, ELECTRICAL CHARACTERIZATIONS, PHOTOVOLTAIC PROPERTIES, HYBRID PEROVSKITES, SERIES RESISTANCE, SCHOTTKY DIODES, SOLAR, PERFORMANCE, EXTRACTION

Abstract

Perovskites have attracted great interest because they provide promising improvement for solar cells. Yet, the perovskites have not been extensively used by the researchers for diode applications. In this study, both Al/p-type Si and Al/perovskite/p-type Si devices have been obtained. We used a facile and cost-effective way of making perovskite thin film layer between the ultra-thin metal and semiconductor as an interfacial layer by spin coating technique as well distributed film. In order to keep costs low, aluminum was chosen as the cathode material. The Al/p-type Si and Al/perovskite/p-type Si devices have exhibited good rectifying properties and calculated rectifying ratio of the devices are 2.39 x 10(3) and 4.56 x 10(4) at 1 V, respectively. Photodiode properties of the device have been illustrated and discussed in the details by calculating some diode parameters. While the Al/p-type Si device has 1.53 ideality factor value and 0.72 eV barrier height, the ideality factor and barrier height values of Al/perovskite/p-type Si device have been obtained as 2.12 and 0.87 eV, respectively under dark condition. The solar cell efficiency and fill factor values of the Al/perovskite/p-type Si device are 7.44 x 10(-3) and 23.7, respectively. Such devices can find applications as rectifiers and photodiodes in industry.