Effects of an ultra-thin CdSexTe1-x junction interface layer on CdTe solar cell parameters were investigated employing a CdSexTe1-x/CdTe absorber structure. CdSexTe1-x thin films with varying composition were grown by vacuum evaporation and CdTe films were produced by the close spaced sublimation (CSS) method. XRD analysis showed that while the CdSexTe1-x layers with x values less than 0.39 crystallized in cubic structure, films that were richer in Se displayed a (cubic + hexagonal) mixed phase. SEM analysis demonstrated a morphology with compact grains for all films. However, the grain size decreased appreciably with increasing Se content. Optical measurements showed that the band gaps of the alloys reached the minimum value of 1.40 eV at x similar to 0.32. CdS/CdSexTe1-x/CdTe solar cells were fabricated employing 100 nm thick CdSexTe1-x interlayers. The Grazing Incidence (GI)-XRD spectra of CdSexTe1-x used in the device structure showed that these inter-layers had graded alloy composition. The average Se-concentration within the graded alloy films were found to agree with the values obtained by EDS. Conversion efficiencies of 9.59% 11.69% and 10.13%, were obtained for x values of 0.24, 0.32 and 0.39, respectively. Spectral response showed enhanced long wavelength response for all devices due to the presence of the CdSexTe1-x interlayer. It was concluded that using an ultra-thin CdSexTe1-x inter-layer with optimum properties between CdS (junction partner) and CdTe improves the cell performance by increasing the current density of the device.