Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
JOURNAL OF ELECTRONIC MATERIALS, vol.46, no.1, pp.1-5, 2017 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 46 Issue: 1
- Publication Date: 2017
- Doi Number: 10.1007/s11664-016-4861-2
- Journal Name: JOURNAL OF ELECTRONIC MATERIALS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.1-5
- Yozgat Bozok University Affiliated: Yes
Abstract
Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53 degrees and 72.30 degrees, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.