Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods

Durmus P., Altindal S., TATAROĞLU A.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.12, no.7, pp.1472-1478, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 12 Issue: 7
  • Publication Date: 2010
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1472-1478
  • Yozgat Bozok University Affiliated: Yes


The effect of interface state (N-ss) and series resistance (R-s) on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-Si (111) (MIS) Schottky barrier diodes (SBDs) were carried out at 80, 200, 320 and 400 K. The energy distribution profile of N-ss was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Phi(theta)) for each temperature. Experimental results show that the value of barrier height (Phi(Bo)) decreases and ideality factor (n) increases with a decrease in temperature. The values of barrier height and N-ss are also obtained from I-V and C-2-V characteristics and these two different methods are compared. The high value of n was attributed to the presence of a native insulator layer at metal/semiconductor (M/S) interface and the high value of N-ss localized at Si/SiO2 interface, changing from the similar to 1x1014cm(-2)eV(-1) (at 80 K) to similar to 5x1013 cm(-2)eV(-1)(at 400 K).